| PART |
Description |
Maker |
| TGF2021-04 |
DC - 12 GHz Discrete power pHEMT 0 MHz - 12000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
|
TriQuint Semiconductor, Inc.
TRIQUINT SEMICONDUCTOR INC
|
| MRFG35003MT1 |
MRFG35003MT1 3.5 GHz, 3 W, 12 V Power FET GaAs PHEMT
The RF GaAs Line GALLIUM ARSENIDE PHEMT RF POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| AS222-92 |
AS222-92:PHEMT GaAs IC SPDT Switch 0.1 GHz|DC-6 GHz Plastic Packaged and Chip|SPST AS222 - 92：PHEMT的砷化镓集成电路单刀双掷开.1-3千兆赫|直流- 6 GHz的塑料包装和芯片|聚苯乙烯
PHEMT GaAs IC SPDT Switch 0.1 - 3 GHz
|
SKYWORKS[Skyworks Solutions Inc.]
|
| AS166-300 |
PHEMT GaAs IC High Power SP4T Switch 0.1-2.5 GHz PHEMT的砷化镓集成电路大功率SP4T开0.1-2.5千兆
PHEMT GaAs IC High Power SP4T Switch 0.1.5 GHz
|
Alpha Industries, Inc.
ALPHA[Alpha Industries]
Alpha Industries Inc
|
| HMC619 |
GaAs PHEMT MMIC POWER AMPLIFIER, DC - 10 GHz
|
Hittite Microwave Corporation
|
| HMC45907 |
GaAs PHEMT MMIC POWER AMPLIFIER, DC - 18 GHz
|
Hittite Microwave Corporation
|
| HMC499LC4 |
SMT PHEMT MEDIUM POWER AMPLIFIER, 21 - 32 GHz
|
Hittite Microwave Corporation
|
| HMC965LP5E HMC965LP5E11 |
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12.5 - 15.5 GHz
|
Hittite Microwave Corporation
|
